High electron mobility electronic device structures...

Details High electron mobility electronic device structures... High electron mobility electronic device structures...

H - Electricity

01

L

H01L 29/732 (2006.01)

Patent

CA 2607646

An electronic device structure comprises a substrate layer of semi-insulating AlxGayInzN, a first layer comprising AlxGayInzN, a second layer comprising Alx- GayInz,N, and at least one conductive terminal disposed in or on any of the foregoing layers, with the first and second layers being adapted to form a two dimensional electron gas is provided. A thin (<1000 nm) III-nitride layer is homoepitaxially grown on a native semi-insulating III-V substrate to provide an improved electronic device (e.g., HEMT) structure.

L'invention concerne une structure de dispositif électronique comprenant une couche de substrat de AlxGayInzN semi-isolant, une première couche comprenant AlxGayInzN, une seconde couche comprenant Alx-GayInz,N, et au moins une borne conductrice montée dans une couche quelconque susmentionnée ou sur une couche quelconque susmentionnée, la première couche et la seconde couche étant conçues pour former un gaz électronique bidimensionnel. Une couche de nitrure III mince (<1000 nm) est homoépitaxialement formée sur un substrat III-V semi-isolé natif pour obtenir une structure de dispositif électronique perfectionnée (par exemple, un transistor à haute mobilité d'électrons HEMT).

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