High electron mobility single heterojunction semiconductor...

Details High electron mobility single heterojunction semiconductor... High electron mobility single heterojunction semiconductor...

H - Electricity

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H01L 21/30 (2006.01) H01L 27/02 (2006.01) H01L 29/765 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1145482

ABSTRACT A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. A chan- nel constituted with this electron accumulation enjoys an excellent electron mobility, particularly at cryogenic temperatures. A layer configuration fab- ricated with two different semiconductors having different electron mobilities and a similar crystal lattice coefficient, and including a single heterojunction is effective to improve electron mobility. Such a layer configuration can be employed for production of an active semiconductor device with high electron mobility, resulting in a high switching speed. The semiconductor devices including an FET, a CCD, etc., exhibit an excellent transfer conductance Gm.

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