H - Electricity – 03 – G
Patent
H - Electricity
03
G
330/13, 330/39
H03G 3/10 (2006.01) H03G 1/04 (2006.01)
Patent
CA 1260081
ABSTRACT OF THE DISCLOSURE A high frequency amplifier circuit based on an amplifying transistor, e.g. a dual-gate FET, having an A.G.C. voltage applied to a control terminal thereof to control the transistor DC operating current, has a diode connected between an input electrode of the transistor and a source of an input high frequency signal. All or part of the DC operating current of the transistor is passed through the diode as the operating current of the diode to thereby produce a high degree of attenuation by the diode when the transistor current level is small, so that reduced cross modulation interference is produced by the transistor when a high degree of gain reduction is executed by A.G.C. control.
547359
Fukui Kiyotake
Nagai Hiroyuki
Sakashita Seiji
Usui Akira
Gowling Lafleur Henderson Llp
Matsushita Electric Industrial Co. Ltd.
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