High frequency oscillator comprising cointegrated thin film...

Details High frequency oscillator comprising cointegrated thin film... High frequency oscillator comprising cointegrated thin film...

H - Electricity

03

B

H03B 5/36 (2006.01) H01L 27/20 (2006.01)

Patent

CA 2097717

ABSTRACT OF THE DISCLOSURE A cointegrated high frequency oscillator including a thin film resonator and active devices formed on the same semiconductor substrate and by a process which is compatible with formation of both the thin film resonator and the active devices. The processes utilized in formation of the thin film resonator are adapted to microelectronic processing techniqes such that the steps of formation of the active devices and the thin film resonator can be intermixed to the degree neccessary to allow, for example, the metallization layers to serve as elements both of the active devices and the thin film resonator.

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