High frequency semiconductor device

Details High frequency semiconductor device High frequency semiconductor device

H - Electricity

01

L

347/35, 356/8

H01L 27/02 (2006.01)

Patent

CA 1134489

ABSTRACT A high frequency semiconductor device comprises a circuit substrate containing circuit elements such as transistors, resistors and capacitors forming a self-contained functional device such as an amplifier with associated matching circuits which operates on high frequency signals and requires a DC bias voltage. The invention deals with packaging this device so that it is hermetically sealed, is robust and provides connections to external circuitry. This is achieved by means of a metal base having a raised platform which supports the circuit substrate. An insulating sub- strate is also mounted on the metal base and this substrate is shaped and disposed to surround the circuit substrate and have an upper surface which is level with that of the circuit substrate. Metallized strips are provided on this upper surface for connection with appropriate elements on the circuit substrate. A cover can be hermetically sealed with respect to the insulating substrate thus hermetically sealing the entire device.

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