H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/124
H01L 27/02 (2006.01) H01L 23/495 (2006.01) H01L 23/66 (2006.01)
Patent
CA 2035214
ABSTRACT OF THE DISCLOSURE A high-frequency SMD transistor has two emitter terminals, whereby a semiconductor transistor chip is secured on a lead frame and is contacted to electrical terminals on the lead frame. The connection should have the lowest, technically- possible emitter inductance. The two emitter terminals of the high-frequency SMD transistor are fashioned of one piece within the lead frame. The two electrical connections are present between the emitter of the semiconductor transistor chip and the two emitter terminals fashioned as a single piece.
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
Hargasser Hans
LandOfFree
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