H - Electricity – 03 – B
Patent
H - Electricity
03
B
331/31
H03B 5/36 (2006.01)
Patent
CA 1311811
HIGH FREQUENCY VLSI OSCILLATOR Abstract Maximum frequency range in a VLSI voltage-controllable crystal oscillator is obtained with a two-stage amplifier with feedback across both stages. The first stage is implemented by an MOS transistor connected in source-followerconfiguration to minimize input capacitance, and the second stage provides the needed gain. If the second stage is implemented by a CMOS transistor, its source electrode and body are connected together to eliminate body effect. A bidirectional voltage limiter connected to a crystal node limits the oscillations to a symmetrical waveform. The bias of an output buffer amplifier may be selectively shifted to maintain optimum duty cycle with the different triggering levels of diverse logic driven by the oscillator, and the bias may be dynamically driven by an analog signal to provide a duty cycle-modulated output.
584176
Embree David M.
Logan Shawn M.
American Telephone And Telegraph Company
Embree David M.
Kirby Eades Gale Baker
Logan Shawn M.
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