High luminance thin-film electroluminescent device

Details High luminance thin-film electroluminescent device High luminance thin-film electroluminescent device

H - Electricity

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H05B 33/20 (2006.01) G09F 9/33 (2006.01) H05B 33/10 (2006.01) H05B 33/14 (2006.01) H05B 33/18 (2006.01) H05B 33/22 (2006.01)

Patent

CA 2012276

A high luminance thin-film electroluminescent device comprising a phosphor layer comprising SrS as the host material and a luminous center. The phosphor layer is sandwiched between two insulating layers and two thin-film electrodes are provided on each side of the insulating layers. At least one of the electrodes is transparent, and the excitation spectrum of the phosphor layer exhibits a peak having a maximum value at a wave- length of about from 350 nm to 370 nm. Such a high luminance thin-film electroluminescent device can be prepared by annealing its phosphor layer comprising SrS as the host material at a temperature of at least 650 °C for at least one hour in an atmosphere of a sulfur- containing gas.

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