High mobility amorphous silicon displaying non- dispersive...

Details High mobility amorphous silicon displaying non- dispersive... High mobility amorphous silicon displaying non- dispersive...

C - Chemistry, Metallurgy

30

B

204/96.31, 148/3

C30B 25/00 (2006.01)

Patent

CA 1190126

ABSTRACT OF THE DISCLOSURE The present invention teaches a combination of parameters for the glow discharge decomposition of silane deposition of an amorphous silicon semiconductor having non-dispersive high mobility transport of majority carriers through the semiconductor material, useful in switching devices such as diodes, transistors and the like.

376096

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