High mobility multilayered heterojunction devices employing...

Details High mobility multilayered heterojunction devices employing... High mobility multilayered heterojunction devices employing...

H - Electricity

01

L

356/149, 356/178

H01L 29/76 (2006.01) H01L 21/203 (2006.01) H01L 21/22 (2006.01) H01L 29/15 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1139892

Abstract of the Disclosure The present invention relates to a high mobility semiconductor device. The device is comprised of a first plurality of narrow bandgap semiconductor layers and a second plurality of wide bandgap semiconductor layers interleaved with and contiguous with the first plurality of layers. The wide bandgap and narrow bandgap layers are substantially lattice-matched to one another so as to form substantially defect free heterojunctions at the interfaces between the layers. The layers have a conduction or valence band step of sufficient magnitude to confine carriers to the narrow bandgap layers. The layers are adapted such that the impurity-concentration-thickness product of the wide bandgap layers exceeds the impurity-concentration-thickness product of the narrow bandgap layers.

326064

Affiliated with

Also associated with

Rating

High mobility multilayered heterojunction devices employing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High mobility multilayered heterojunction devices employing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High mobility multilayered heterojunction devices employing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-361520