High performance pnp and npn transistor structure and...

Details High performance pnp and npn transistor structure and... High performance pnp and npn transistor structure and...

H - Electricity

01

L

356/30, 148/2.4

H01L 27/04 (2006.01) H01L 21/331 (2006.01) H01L 21/762 (2006.01) H01L 21/8224 (2006.01) H01L 27/082 (2006.01) H01L 29/10 (2006.01) H01L 29/423 (2006.01) H01L 29/732 (2006.01) H01L 29/735 (2006.01)

Patent

CA 1148269

Abstract Disclosed is the fabrication and structure of very small integrated circuit devices of both PNP and NPN types with very high speeds and low power re- quirements. The structure provides vertical NPN and lateral PNP transistors formed within the same semi- conductor chip. The base width of the lateral PNP transistor is very narrow (approximately 300 to 400 nanometers). This narrow dimension is in part ob- tained by using a well defined chemically vapor deposited (CVD) oxide mask instead of conventional lithographic masking. To eliminate the emitter current injecting into the substrate the P+ emitter and P+ collector of the PNP transistor are bounded by a silicon nitride and silicon dioxide dielectric layer. FI 9-79-014

372670

Affiliated with

Also associated with

Rating

High performance pnp and npn transistor structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High performance pnp and npn transistor structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High performance pnp and npn transistor structure and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-516822