High-performance trench capacitors for dram cells

Details High-performance trench capacitors for dram cells High-performance trench capacitors for dram cells

H - Electricity

01

L

356/25

H01L 21/225 (2006.01) H01L 21/8242 (2006.01) H01L 29/94 (2006.01)

Patent

CA 1258539

Abstract: The present invention relates to a method of making a VLSI DRAM device in a semiconductive member. The method is comprised of the steps of forming trenches in the member and doping the trenches to form shallow high- conductivity sub-surface trench layers by forming a high- concentration doped source layer in contact with the trenches. The method further includes heating the doped source layer at an appropriate temperature in the presence of an appropriate reactant to cause a reaction which completely consumes the source layer at a rate exceeding the rate at which the impurity diffuses in the member. The reaction yields a reaction product and the impurity has a source-layer-material to reaction-product segregation coefficient significantly greater than unity whereby a shallow trench layer characterized by a high dopant concentration is formed in the member.

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