High power distributed feedback ridge waveguide laser

Details High power distributed feedback ridge waveguide laser High power distributed feedback ridge waveguide laser

H - Electricity

01

S

H01S 5/30 (2006.01) G02F 1/225 (2006.01) G02F 1/313 (2006.01) H01Q 3/26 (2006.01) H01Q 23/00 (2006.01) H01S 5/00 (2006.01) H01S 5/12 (2006.01) G02F 1/01 (2006.01) G02F 1/21 (2006.01) H01S 5/10 (2006.01) H01S 5/20 (2006.01) H01S 5/323 (2006.01)

Patent

CA 2398833

A distributed feedback ridge waveguide semiconductor laser diode (10) having a waveguide region (22) with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure (31) and exposed portions of the waveguide region (25) which surround the ridge structure of less than 0.001. This permits the width (W) of the ridge (31) to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 µm wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region (24).

L'invention concerne une diode laser (10) semi-conductrice en guide d'ondes à arête à rétroaction répartie, comportant une région de guide d'ondes (22) d'épaisseur classique d'au moins 500 nanomètres et dont la différence d'indice de réfraction entre la structure en arête (31) et les parties exposées de la région en guide d'ondes (25) est inférieure à 0,001. La largeur (W) de l'arête (31) peut être ainsi augmentée au delà de 3,5 microns ce qui permet un passage direct aux sorties de forte puissance à des longueurs d'ondes de 1,55 µm, où la diffusion et l'échauffement de porteurs limitent la densité de courant injectée dans la région active (24).

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