High-power dual-gate field-effect transistor

Details High-power dual-gate field-effect transistor High-power dual-gate field-effect transistor

H - Electricity

01

L

356/149

H01L 23/14 (2006.01) H01L 21/60 (2006.01) H01L 23/15 (2006.01) H01L 29/76 (2006.01) H01L 29/78 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1200326

Abstract of -the Disclosure HIGH-POWER DUAL-GATE FIELD-EFFECT TRANSISTOR An FET pellet containing a plurality of each of source, gate and drain electrodes in an array, normally combined with a carrier to create a single-gate power FET, is combined with a special carrier having a source terminal, a drain terminal, and first and second gate terminals to create a dual-gate FET with relatively high power handling capabilities. In the dual gate FET some of the drain electrodes are connected to the source terminal, some of the gate electrodes are connected to the first gate terminal, and some of the gate electrodes are connected to the second gate terminal. Respective sets of source electrodes are connected together by the carrier. Some source electrodes retain the characteristics of source electrodes and other source electrodes have the characteristics of drain electrodes.

439975

Affiliated with

Also associated with

Rating

High-power dual-gate field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-power dual-gate field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-power dual-gate field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1297892