H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/0296 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2744774
Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n- p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N- intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
L'invention concerne des structures de cellule solaire, formées à laide dune épitaxie de faisceau moléculaire (MBE), qui peuvent obtenir une efficacité énergétique améliorée par rapport à des structures de cellule solaire à film mince de la technique antérieure. Un dispositif de cellule solaire à jonction p-n inverse et des procédés pour former le dispositif de cellule solaire à jonction p-n inverse à laide dune MBE sont décrits. Une diversité de dispositifs de cellule solaire à jonction n-p et à jonction p-n inverse et des procédés de fabrication associés sont également décrits, ainsi que des dispositifs de cellule solaire à jonction de type n-intrinsèque-p et à jonction inverse de type p-intrinsèque-n.
Gowling Lafleur Henderson Llp
Uriel Solar Inc.
LandOfFree
High power efficiency, large substrate, polycrystalline cdte... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High power efficiency, large substrate, polycrystalline cdte..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power efficiency, large substrate, polycrystalline cdte... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-2061320