High power gallium arsenide schottky barrier field effect...

Details High power gallium arsenide schottky barrier field effect... High power gallium arsenide schottky barrier field effect...

H - Electricity

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356/144, 356/153

H01L 29/80 (2006.01) H01L 21/263 (2006.01) H01L 29/423 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1092254

HIGH POWER GALLIUM ARSENIDE SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR MADE BY ELECTRON LITHOGRAPHY Abstract of the Disclosure An integrated high-power gallium arsenide field- effect-transistor device for operation in the gigahertz range comprises a multiple-gate structure. The device, which features gate cross-under fingers, is fabricated in microminiature form by directly processing a wafer using electron-beam lithographic techniques.

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