High power semiconductor device with integral heat sink

Details High power semiconductor device with integral heat sink High power semiconductor device with integral heat sink

H - Electricity

01

L

H01L 23/373 (2006.01) H01L 23/14 (2006.01) H01L 23/473 (2006.01)

Patent

CA 2045081

ABSTRACT OF THE DISCLOSURE A high power semiconductor device with integral heat sink capable of accommodating substantial heat flux on the order of one kw per cm2. The integral heat sink is formed on the active surface of the semiconductor and utilizes an AlN thin film of high purity to provide a low thermal impedance heat conductor for removing heat directly from the active semiconductor surface. A microchannel heat sink is formed on the AlN thin film and has a source of cooling fluid flowing through the microchannel heat sink for conducting heat away from the sink. The result is the ability to conduct large heat fluxes away from the intimately contacted heat generating semiconductor surface to the cooling fluid in the microchannel heat sink and thus operate the semiconductor under substantially higher power than has been practical heretofore in a device of such simplicity.

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