High-pressure phase boron nitride-based sintered body

Details High-pressure phase boron nitride-based sintered body High-pressure phase boron nitride-based sintered body

C - Chemistry, Metallurgy

04

B

C04B 35/5831 (2006.01)

Patent

CA 2242891

A high-pressure phase boron nitride-based high-hardness high-strength sintered body for cutting tools represented by a milling tool and an end mill etc., which is improved in wear resistance and chipping resistance, is obtained. The high-pressure phase boron nitride-based sintered body according to the present invention comprises a plurality of grains of high-pressure phase boron nitride and a binder phase, and the content of the aforementioned grains is at least 20.0 volume % and not more than 99.7 volume %. The aforementioned binder phase includes a first binder phase enclosing the aforementioned grains and a second binder phase other than that. The first binder phase consists of the form of at least either a nitride of at least one of Ti, TiA~, Zr and Hf or a solid solution thereof. The aforementioned second binder phase includes a grain growth suppressive binder phase between a plurality of the aforementioned grains enclosed with the aforementioned first binder phase.

Matière frittée à phase haute pression, à base nitrure de bore, présentant une grande dureté et une grande solidité, ainsi qu'une résistance améliorée contre l'usure et les défectuosités. Cette matière convient par conséquent aux outils de coupe tels que fraises à fileter et fraises cylindriques. Cette matière est essentiellement constituée d'une pluralité de particules (1) de nitrure de bore à phase haute pression et de phases liantes (2, 3), la proportion de particules (1) représentant entre 20,0 et 99,7 % en volume. Les phases liantes (2, 3) sont composés d'une première phase (2) entourant les particules (1) et d'une seconde phase (3) emplissant l'espace résiduel. La phase liante (2) est formée d'une nitrure d'au moins un des éléments Ti, TiAl, Zr et Hf, ou d'une solution solide de ces derniers. La phase liante (3) contient une autre phase liante (4) inhibant une recristallisation secondaire des particules (1) entourées par la phase liante (2).

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