High purity diffusion furnace components

Details High purity diffusion furnace components High purity diffusion furnace components

C - Chemistry, Metallurgy

30

B

356/187, 117/237

C30B 31/10 (2006.01) C04B 30/02 (2006.01) C04B 35/56 (2006.01) C04B 35/565 (2006.01) C04B 35/584 (2006.01) C30B 31/14 (2006.01)

Patent

CA 1332698

ABSTRACT Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited on a pre-shaped fibrous matrix of silicon carbide, carbon, or carbon coated silicon carbide. The high purity of the matrix prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous re-enforcement provides strength combined with light weight.

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