High purity doping alloys

Details High purity doping alloys High purity doping alloys

B - Operations, Transporting

01

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117/48.2

B01J 13/04 (2006.01) B01J 2/00 (2006.01) B01J 2/16 (2006.01) C23C 16/24 (2006.01) C23C 16/442 (2006.01) C23C 26/00 (2006.01)

Patent

CA 1309308

Abstract of the Disclosure HIGH PURITY DOPING ALLOYS Particles of silicon and a p or n carrier substance which are in spherical or spheroidal form, and suitable for use in the preparation of doped semiconductor devices, can be prepared by a fluidized bed technique for chemical vapor deposition of a carrier substance (B, P, As or Sb). The prepared products have a kernel of high purity poly- silicon and a layer of silicon/dopant alloy upon the kernel. Optionally, the particles have a thin outer layer of silicon.

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