C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/196
C01B 33/04 (2006.01) C01B 33/029 (2006.01) C01B 33/107 (2006.01) C30B 25/02 (2006.01)
Patent
CA 1210220
43 HIGH PURITY SILANE AND SILICON PRODUCTION Abstract of the Disclosure Silicon tetrachloride, hydrogen and metallurgical sillcon are reacted at about 400-600°C and t pressures excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.
424938
Hopley William G.
Union Carbide Corporation
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