High quality ultra-thin gate dielectric

Details High quality ultra-thin gate dielectric High quality ultra-thin gate dielectric

H - Electricity

01

L

H01L 29/786 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2638452

Disclosed is an ultra-thin (-50nm) silicon nitride (SiN x) dielectric demonstrating low leakage current density (e.g. 0.1 nm/cm2 ) and high breakdown voltage (e.g. 5.6 MV/cm), highly suitable as a gate dielectric in a broad variety of thin film transistor technologies. The gate dielectric thickness can be scaled to even thinner values without compromising on gate leakage.

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