High-reliability group iii-nitride light emitting diode

Details High-reliability group iii-nitride light emitting diode High-reliability group iii-nitride light emitting diode

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2485640

A physically robust light emitting diode is disclosed that offers high- reliability in sstandard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nutride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.

L'invention concerne une diode électroluminescente physiquement robuste, qui présente une haute fiabilité en matière d'encapsulation classique et résiste à des conditions de température et d'humidité élevées. La diode comprend une diode à hétérojonction à base de nitrures du Groupe III munie d'une couche de contact de type P à base de nitrures du Groupe III; un contact ohmique à la couche de contact de type P; et une couche de passivation d'une composition de nitrures de silicium déposée par pulvérisation cathodique sur le contact ohmique. L'invention concerne en outre un procédé de fabrication d'une diode électroluminescente et d'une lampe DEL incorporant ladite diode.

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