H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/197, 345/22
H01L 31/04 (2006.01) H01S 3/00 (2006.01)
Patent
CA 1189172
A high power excimer laser emits a pulsed output at a high repetition rate in the ultraviolet wavelength region and a uniform power output across the laser beam. By sub- jecting doped silicon wafers to the pulsed laser output, epitaxial regrowth of silicon crystals can be induced to repair damage to the silicon crystal structure which normally occurs during implantation of the dopant materials.
365933
Fetherstonhaugh & Co.
Helionetics Inc.
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