High resistance cermet film and method of making the same

Details High resistance cermet film and method of making the same High resistance cermet film and method of making the same

B - Operations, Transporting

32

B

117/162, 204/96.

B32B 9/06 (2006.01) B32B 3/06 (2006.01) H01C 7/00 (2006.01) H01C 17/12 (2006.01)

Patent

CA 1057490

Abstract A cermet film which includes metal particles having an average diameter of 30 .ANG. to 120 .ANG. and a ceramic insulator, with the volume percent of the metal particles being no greater than that at which the percolation threshold appears. The cermet film is formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a hydrogen atmosphere at a temperature over 750° C whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity. - 1 -

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