C - Chemistry – Metallurgy – 08 – G
Patent
C - Chemistry, Metallurgy
08
G
C08G 73/00 (2006.01) C08G 73/02 (2006.01) C08L 79/02 (2006.01) H01L 51/00 (2006.01) H01L 51/30 (2006.01) H01L 51/50 (2006.01) C08L 25/08 (2006.01) C08L 33/26 (2006.01)
Patent
CA 2496616
Compositions are provided comprising polyaniline (PANI) with poly(2-acrylamido- 2-methyl-1-propanesulfonic acid) (PAAMPSA) as the counterion (PANI/PAAMPSA) and an amount of poly(styrenesulfonic acid) (PSS) sufficient to reduce the conductivity of the composition relative to PANI/PAAMPSA. Invention compositions may further comprise poly(acrylamide) (PAM). Invention compositions are useful as high resistance buffer layers for use in electroluminescent devices (such as, organic light emitting diodes (OLEDs)).
L'invention porte sur des compositions comprenant une polyaniline (PANI) avec un acide poly(2-acrylamido-2-méthyl-1-propanesulfonique) (PAAMPSA) comme contre ion (PANI/PAAMPSA) et une quantité d'un acide poly(styrènesulfonique) (PSS) suffisante pour réduire la conductivité de la composition par rapport à PANI/PAAMPSA. Les compositions de l'invention peuvent également comprendre un poly(acrylamide) (PAM) et sont utiles comme couches tampons à haute résistance dans des dispositifs électroluminescents (tels que des diodes organiques électroluminescentes (OLED).
Bennett Jones Llp
E. I. Du Pont de Nemours And Company
LandOfFree
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