High resolution lithographic resist and method

Details High resolution lithographic resist and method High resolution lithographic resist and method

G - Physics

03

C

96/155, 96/266

G03C 1/72 (2006.01) G03F 7/008 (2006.01)

Patent

CA 1220375

Abstract of the Disclosure A negative working resist composition and medium for microlithographic recording comprises a vinyl polymer having aromatic quaternized nitrogen-containing pendant groups. The resist undergoes a transformation from high to low solubility in polar solvents such as water or low molecular weight alcohols upon exposure to electron beams, ultraviolet light, or x-rays. A method for pat- terning substrates by employing the resist composition is also disclosed.

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