High-selectivity plasma-assisted etching of resist- masked...

Details High-selectivity plasma-assisted etching of resist- masked... High-selectivity plasma-assisted etching of resist- masked...

H - Electricity

01

L

356/133

H01L 21/302 (2006.01) H01L 21/311 (2006.01) H01L 21/312 (2006.01)

Patent

CA 1160759

- 13 - HIGH-SELECTIVITY PLASMA-ASSISTED ETCHING OF RESIST-MASKED LAYER Abstract of the Disclosure In a VLSI device fabrication process, erosion of a patterned resist layer during dry etching of an underlying layer can significantly limit the high- resolution patterning capabilities of the process. As described herein, a protective polymer layer is formed and maintained only on the resist material while the underlying layer is being etched. High etch selectivities are thereby achieved. As a consequence, very thin resist layers can be utilized in the fabrication process and very-high- resolution patterning for VLSI devices is thereby made feasible.

387027

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