H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/121, 356/141
H01L 21/86 (2006.01) H01L 21/74 (2006.01) H01L 21/762 (2006.01) H01L 27/08 (2006.01) H01L 29/8605 (2006.01)
Patent
CA 1102011
HIGH SHEET RESISTANCE STRUCTURE FOR HIGH DENSITY INTEGRATED CIRCUITS Abstract A high sheet resistance structure for high density integrated circuits and the method for manufacturing such structure is given. The structure includes a silicon region separated from other silicon regions by a dielectric barrier surrounding the region. A resistor of a first conductivity, for example, N type, encompasses substantially the surface of the silicon region. Electrical contacts are made to the resistor. A region highly doped of a second conductivity, for example, P-type, is located below a portion of the resistor region. This region of second conductivity is connected to the surface. Electrical contacts are made to this varied region for biasing purposes. A second region within the same isolated silicon region may be used as a resistor. This region is located below the buried region of second conductivity. Alternatively, the described resistor regions can be connected as transistors. This allows the formation of a standard masterslice which can be personalized at a late stage in the manufacturing to either resistors or transistors in all or a portion of the standard regions.
307633
Anantha Narasipur G.
Chang Augustine W.
International Business Machines Corporation
Na
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