High-speed diamond growth using a microwave plasma in pulsed...

Details High-speed diamond growth using a microwave plasma in pulsed... High-speed diamond growth using a microwave plasma in pulsed...

C - Chemistry, Metallurgy

30

B

C30B 25/10 (2006.01) C23C 16/27 (2006.01) C23C 16/511 (2006.01) C30B 25/02 (2006.01) C30B 29/04 (2006.01)

Patent

CA 2512731

Method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma, in which, in a vacuum chamber, a plasma of finite volume is formed near a substrate by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge, which has a succession of low- power states and of high-power states, and having a peak absorbed power Pc, so as to obtain at least carbon-containing radicals in the plasma and to deposit the said carbon-containing radicals on the substrate in order to form a diamond film thereon. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm3, while maintaining the substrate to a substrate temperature of between 700~C and 1000~C.

Procédé de fabrication d'un film de diamant de qualité électronique à grande vitesse à l'aide d'un plasma micro-onde pulsé, selon lequel un plasma de volume fini est formé dans une chambre à vide près d'un substrat en soumettant un gaz contenant au moins de l'hydrogène et du carbone à une décharge pulsée présentant une succession d'états de basse puissance et d'états de haute puissance et ayant une puissance crête absorbée P¿c?, de manière à obtenir au moins des radicaux contenant du carbone dans le plasma, et selon lequel lesdits radicaux contenant du carbone sont déposés sur le substrat afin de former un film de diamant sur ledit substrat. De la puissance est injectée dans le volume du plasma à une densité de puissance crête d'au moins 100 W/cm?3¿, le substrat étant simultanément maintenu à une température située entre 700 ·C et 1000 ·C.

Affiliated with

Also associated with

Rating

High-speed diamond growth using a microwave plasma in pulsed... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-speed diamond growth using a microwave plasma in pulsed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-speed diamond growth using a microwave plasma in pulsed... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1509915