High speed memory cell

Details High speed memory cell High speed memory cell

G - Physics

11

C

352/82.3

G11C 11/40 (2006.01) G11C 11/412 (2006.01) H03K 3/356 (2006.01)

Patent

CA 1054714

HIGH SPEED MEMORY CELL Abstract of the Disclosure An improved very high speed, static random access memory cell is disclosed which is comprised of complementary metal oxide semiconductor field effect transistors which may be formed by silicon on sapphire techniques. To maximize the speed of the read operation while, at the same time, decreasing the overall cell area and consequently the cost, the cell is made highly non-symmetrical in design. As an example, selected ones of the semiconductor transistors may have reduced channel widths with respect to one another.

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