High speed modulation utilizing field effect for return path

Details High speed modulation utilizing field effect for return path High speed modulation utilizing field effect for return path

H - Electricity

04

B

H04B 10/04 (2006.01) H01S 5/042 (2006.01) H01S 5/183 (2006.01) H01S 5/42 (2006.01) H01S 5/022 (2006.01)

Patent

CA 2339744

A system and method for achieving high speed modulation of semi-conductor devices, such as VCSELs, utilizing field effect to confine a signal path is described. In semi-conductor devices operating at high data rates the configuration of connector rails and signal paths can become a limiting factor. The present invention provides an arrangement in which the signal return path is confined relative to the energizing signal path by a field effect in a common conductor extending under the signal path.

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