High speed modulation utilizing the field effect

H - Electricity – 01 – S

Patent

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Details

H01S 5/183 (2006.01) H01S 5/022 (2006.01) H01S 5/042 (2006.01) H04B 10/145 (2006.01) H01S 5/062 (2006.01) H01S 5/40 (2006.01)

Patent

CA 2300045

A system and method for achieving high speed modulation of semi-conductor devices, such as VCSELs, utilizing field effect to confine a signal path is described. In semi- conductor devices operating at high data rates the configuration of connector rails and signal paths can become a limiting factor. The present invention provides an arrangement in which the signal return path is confined relative to the energizing signal path by a field effect.

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