High speed noise immune bipolar logic family

Details High speed noise immune bipolar logic family High speed noise immune bipolar logic family

H - Electricity

03

K

328/139

H03K 19/02 (2006.01)

Patent

CA 1303151

HIGH SPEED NOISE IMMUNE BIPOLAR LOGIC FAMILY Abstract of the Disclosure A logic gate comprises: an input terminal, an output terminal, and a pair of voltage supply terminals; a bipolar switching transistor having a base, a collector, an emitter, an emitter-base junction, and a collector-base junction, the emitter being connected to one of the voltage supply terminals; a load device connected between the other of the voltage supply terminals and the collector of the bipolar transistor; a current independent voltage source and a voltage independent current source connected in series between the input terminal and the base of the bipolar transistor; and discharge means connected in parallel with the current independent voltage source for actively discharging the base-emitter junction of the bipolar switching transistor during switching of the bipolar switching transistor from an on state to an off state. The current independent voltage source may comprise a first diode, and the discharge means may comprise a second diode connected in antiparallel with the first diode. Preferably, the second diode has a lower threshold voltage than the first diode. The voltage independent current source may comprise a depletion mode field effect transistor having a gate, a source and a drain, the source and drain being connected in series between the current independent voltage source and the base of the bipolar switching transistor. The logic gate may have a plurality of input terminals with a respective current independent voltage source and a respective voltage independent current source connected in series between each input terminal and the base of the bipolar transistor, and respective discharge means connected in parallel with each current independent voltage source for actively discharging the base-emitter junction during switching of the bipolar switching transistor from an on state to an off state. The logic gate is particularly suitable for use in memory elements.

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