High-speed random access memory

G - Physics – 11 – C

Patent

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352/82

G11C 11/34 (2006.01) G11C 11/411 (2006.01) H03K 3/286 (2006.01)

Patent

CA 1047645

HIGH-SPEED RANDOM ACCESS MEMORY Abstract of the Disclosure A bipolar RAM has increased speed through use of non- saturating voltages and improved read/write capabilities provided by memory cell and isolation circuit which functions as a sense amplifier. An output buffer including constant current means provides an output responsive to the signal from the memory cells taken through the isolation circuitry.

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