High speed semiconductor device

Details High speed semiconductor device High speed semiconductor device

H - Electricity

01

L

356/53, 356/70

H01L 29/267 (2006.01) H01L 29/76 (2006.01) H01L 29/88 (2006.01)

Patent

CA 1092723

Abstract of the Disclosure This high speed semiconductor device is similar to a trans- istor in that it is a three terminal device, but differs from such because, among other things, the dominant mechanism for transfer of charge from one region to another is tunneling. The device is com- prised of three semiconductor regions, which can be characterized as the emitter, base and collector regions. The emitter and collector regions have a first conductivity type, and the base region has the opposite conductivity type, where both the base-emitter and base- collector junctions are heterojunctions. The base region is suf- ficiently thin that change carriers can tunnel therethrough, ?he bandgap of the base region being so located with respect to the band- gap of the emitter and collector regions that very low leakage currents result. The base region has a small resistance due to its heavy doping which is greater than the doping of both the emitter and the collector. Both the valence band and the conduction band in the emit- ter and collector regions are shifted in the same directions with re- spect to the valence band and conduction band of the base region (i.e., the energy gaps of the emitter and collector are shifted in the same direction with respect to the energy gap of the base region and overlap with the energy band of the base to produce band-edge discontinuities .DELTA.Ec and .DELTA.Ev). Any materials yielding the proper energy band diagram can be used; for example. Si-GaP and alloys of GaAsSb-InGaAs are particularly suitable.

294653

Affiliated with

Also associated with

Rating

High speed semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High speed semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-813747