High speed semiconductor photodetector

Details High speed semiconductor photodetector High speed semiconductor photodetector

H - Electricity

01

L

H01L 31/02 (2006.01) H01L 31/107 (2006.01)

Patent

CA 2331992

The invention is a semiconductor avalanche photodetector (10) including an essentially undoped multiplication layer (14); a thin, undoped light absorbing layer (16); and a doped waveguide layer (17) which is separate from the light absorbing layer and is capable of coupling incident light into the light absorbing layer. (Fig. 1)

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