H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/116, 345/22,
H01L 45/00 (2006.01) H01L 29/04 (2006.01) H01L 31/0376 (2006.01) H01L 31/07 (2006.01) H01L 35/22 (2006.01)
Patent
CA 1123525
Abstract of the Disclosure An amorphous semiconductor member which is capable of withstanding high temperatures and of having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy. It also includes a modifier material added to the amorphous host matrix, such as a transition metal or rare earth element, having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic con- figurations of the amorphous host matrix at room temperature and above. The amorphous semiconductor member may also comprise an amorphous host matrix formed from boron, carbon silicon or german- ium having a modifier material of boron or carbon added thereto The forming of the amorphous host matrix and the adding of the modifier material is preferably done by cosputtering or the like.
311648
Energy Conversion Devices Inc.
Macrae & Co.
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