High voltage dielectrically isolated remote gate solid-state...

Details High voltage dielectrically isolated remote gate solid-state... High voltage dielectrically isolated remote gate solid-state...

H - Electricity

01

L

356/122

H01L 29/38 (2006.01)

Patent

CA 1121517

Abstract of the Disclosure A high voltage solid-state switch, which allows alternating or direct current operation and provides bilateral blocking, consists of a first p- type silicon body dielectrically isolated from a semiconductor substrate with a p+ type anode region an n+ type cathode region and an n+ type gate region located within the body. A second p- type region of higher impurity concentration than the body encircles the cathode region. The anode region, gate region, and cathode region are all separated by the body. The anode region and the cathode region are adjacent one another. Separate electrodes are coupled to the anode region, gate region, cathode region and substrate, respectively.

340916

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