H - Electricity – 03 – F
Patent
H - Electricity
03
F
330/28
H03F 3/21 (2006.01) H01L 23/66 (2006.01) H03F 3/19 (2006.01) H03F 3/193 (2006.01)
Patent
CA 1161911
22,294 HIGH VOLTAGE, HIGH FREQUENCY AMPLIFIER Abstract of the Disclosure A high frequency amplifier utilizes series-connected transistors to achieve high voltage class C operation. High frequency input power is coupled to the gate of a first FET which is normally biased off. The source of a second FET is coupled to the drain of the first FET. The drain of the second FET, which forms the output of the amplifier, is coupled through a radio frequency choke to a supply voltage. The gate of the second FET is dc biased at about one half of the supply voltage. A capacitor coupled between the gate of the second FET and ground controls the level of high frequency power applied to the second FET. The amplifier can be operated at a dc voltage which is approximately equal to one half the sum of the individual breakdown voltages of the serially connected FET's.
376075
Haugsjaa Paul O.
Regan Robert J.
Gte Laboratories Incorporated
R. William Wray & Associates
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