High voltage integrated circuit diode with a charge...

H - Electricity – 01 – L

Patent

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H01L 29/868 (2006.01) H01L 27/06 (2006.01)

Patent

CA 2216083

An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

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