H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/868 (2006.01) H01L 27/06 (2006.01)
Patent
CA 2216083
An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.
Buhler Steven A.
Lerma Jaime
Sim & Mcburney
Xerox Corporation
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