High voltage junction solid-state switch

Details High voltage junction solid-state switch High voltage junction solid-state switch

H - Electricity

01

L

356/161, 356/34

H01L 29/02 (2006.01) H01L 21/761 (2006.01) H01L 27/08 (2006.01) H01L 29/739 (2006.01) H01L 29/74 (2006.01)

Patent

CA 1131800

Abstract of the Disclosure A high voltage solid-state switch, which allows alternating or direct current operation and provides bidirectional blocking, consists of a first p type semiconductor body on an n type semiconductor wafer substrate. A p+ type anode region and an n+ type cathode region exist in portions of the semiconductor body. A second p type region of higher impurity concentration than the semiconductor body encircles the cathode region. The anode region and second p type region are separated from each other by a portion of the semiconductor body. The semiconductor wafer substrate, which acts as a gate, is adapted to allow low resistance contact thereto. Separate low resistance contacts are made to the anode region and to the cathode region.

340799

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