High voltage metal oxide semiconductor transistors

Details High voltage metal oxide semiconductor transistors High voltage metal oxide semiconductor transistors

H - Electricity

01

L

356/149

H01L 29/423 (2006.01) H01L 29/06 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1186072

HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTORS Abstract of the Disclosure A high voltage metal-oxide-semiconductor (MOS) transistor has a source, a drain, a channel extending between the source and drain, an oxide layer overlying the channel, a gate electrode overlying the oxide, and a drift region surrounding the drain. Adjacent the source, the oxide layer is thin and adjacent the drain it is thick. Between the thin and thick oxide regions, at a location overlying part of the drift region, the oxide is of intermediate thickness. In operation the voltage applied to the drain is distributed along the length of the drift region and the high electric field which normally exists at the drain end of the thin gate oxide is reduced. The voltages applied to the gate, substrate and drain electrodes combine to deplete the drift region, first beneath the intermediate oxide and secondly as the drain voltage is further increased depletion occurs beneath the thick barrier oxide thereby distributing the drain voltage in a controlled manner. By grading the thickness of the oxide layer between the source and drain and by covering a portion of this oxide with a gate electrode, avalanche breakdown of the device can be avoided up to an operating voltage exceeding that of diffused junctions. Indeed using the graded oxide thicknesses and optimizing other structural parameters, plane junction breakdown at the junction between the drift region and the substrate is attained instead of the surface aided curved junction breakdown usually obtained with high voltage MOS power transistors of this type. - i -

421886

Affiliated with

Also associated with

Rating

High voltage metal oxide semiconductor transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage metal oxide semiconductor transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage metal oxide semiconductor transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1337068