High voltage mos/bipolar power transistor apparatus

Details High voltage mos/bipolar power transistor apparatus High voltage mos/bipolar power transistor apparatus

H - Electricity

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H01L 27/04 (2006.01) H01L 27/07 (2006.01) H01L 29/739 (2006.01) H03K 17/567 (2006.01)

Patent

CA 1209718

HIGH VOLTAGE MOS/BIPOLAR POWER TRANSISTOR APPARATUS By Chenming Hu ABSTRACT A high voltage MOS/BIPOLAR power transistor assembly is described comprising in a monolithic embodiment thereof, an N channel MOSFET which is integrated with a PNP transistor. A P+ substrate emitter provides hole injection into an N base layer thereby insuring through conductivity modulation a low "on" resistance. The base current IB which is regulated by the channel resistance eliminates hot spots, forward-biased second breakdown and current hopping.

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