High-voltage photovoltaic cell having a hetero junction of...

Details High-voltage photovoltaic cell having a hetero junction of... High-voltage photovoltaic cell having a hetero junction of...

H - Electricity

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345/23

H01L 31/04 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1176740

ABSTRACT OF THE DISCLOSURE A p-i-n amorphous silicon photovoltaic cell of improved conversion efficiency is obtained by incorporating, on at least either one of the p and n type sides of the cell, preferably on the side exposed to the incident light, an amorphous semiconductor which satisfies the requirement that the optical band gap, Eg.opt, be not less than about 1.85 eV, the electric conductivity be not less than about 10-8 .OMEGA.cm-1 and the p-i-n junction diffusion potential, Vd, be not less than about 1.1 volts and the requirement that the amorphous semiconductor be formed of a substance represented by the general formula, a-Si1-xCx or a-Si1-yNy.

391378

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