High voltage semiconductor device and fabrication process

Details High voltage semiconductor device and fabrication process High voltage semiconductor device and fabrication process

H - Electricity

01

L

356/154

H01L 29/06 (2006.01) H01L 21/38 (2006.01)

Patent

CA 2021671

ABSTRACT This invention relates to a high voltage semiconductor device comprising: a substrate (44); an epitaxial region (46) on said substrate including a doped electrode region (48) and a doped isolation region (50), said doped electrode region and said doped isolation region being separated by a first distance (54); an isolation layer (56) on part of said epitaxial region between said doped isolation region and said doped electrode region, said isolation layer covering a portion of the end of said doped electrode region: a first polycrystalline semiconductor layer (60) on said isolation layer; and a metallisation layer (68,74), said high voltage semiconductor device being characterised by: a second polycrystalline semiconductor layer (40) on said first polycrystalline semiconductor layer. A process for fabricating a high voltage semiconductor device is also disclosed.

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