High voltage semiconductor device having an improved dv/dt...

Details High voltage semiconductor device having an improved dv/dt... High voltage semiconductor device having an improved dv/dt...

H - Electricity

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H01L 29/74 (2006.01) H01L 29/10 (2006.01) H01L 29/417 (2006.01)

Patent

CA 1160358

RD-8137 HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING AN IMPROVED dv/dt CAPABILITY Abstract of the Disclosure A semiconductor device used for high voltage applications exhibits reduced susceptibility to being inadvertently turned-on by capacitive charging currents generated by relatively high voltage transients impressed across an anode and a cathode of the device. The capacitive charging. currents are manifested as a gate current which in a thyristor renders the device conductive if it exceeds a critical value and in a transistor is multiplied by the current gain. A conductive ring and adjacent groove are employed on the surface of the device, along with certain interconnections, to maintain the level of the transient-produced gate current at a value below the critical value.

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