High voltage semiconductor device having improvements to the...

Details High voltage semiconductor device having improvements to the... High voltage semiconductor device having improvements to the...

H - Electricity

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H01L 29/74 (2006.01) H01L 29/73 (2006.01)

Patent

CA 1163020

HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING IMPROVEMENTS TO THE dv/dt CAPABILITY AND PLASMA SPREADING Abstract of the Disclosure A semiconductor device used for high voltage applications exhibits reduced susceptibility to being inadvertently turned on by capacitive charging currents generated by relatively high voltage transients impressed across an anode and a cathode of the device. The capacitive charging currents are manifested as gate currents which in a thyristor render the device conductive it they exceed a critical valve, and in a transistor are multiplied by the current gain. A capacitor integral with the semiconductor device structure is coupled to a gate region of the device to divert a portion of transient-generated capacitive charging currents, thereby reducing the associated gate currents and improving the dv/dt capability of the device.

377573

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