High voltage semiconductor devices

Details High voltage semiconductor devices High voltage semiconductor devices

H - Electricity

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H01L 29/86 (2006.01) H01L 21/761 (2006.01) H01L 27/07 (2006.01) H01L 29/06 (2006.01) H01L 29/732 (2006.01) H01L 29/868 (2006.01)

Patent

CA 1200323

HIGH VOLTAGE SEMICONDUCTOR DEVICES ABSTRACT OF THE DISCLOSURE A P-N diode includes a P- substrate with a thin N- epitaxial layer thereon. A P+ isolation region surrounds the periphery of the N- epitaxial layer and is integrally connected to the P- substrate. An N+ cathode region extends into the N- epitaxial layer from the upper surface of such layer. A P+ anode region extends into the N- epitaxial layer from its upper surface and surrounds the N+ cathode region. A further P+ region extends into the N- epitaxial layer from its upper surface and surrounds the N+ cathode region, and, in turn, is surrounded by the P+ anode region. The further P+ region is biased at the same potential as the P- substrate. An N+ buried layer is situated between the P- substrate and the N- epitaxial layer, beneath the P+ anode region, and surrounds the N+ cathode region. An N+ sinker region extends into the N- epitaxial layer from its upper surface and terminates in integral contact with the N- buried layer, the N+ sinker region surrounding the P+ anode region, and, in turn, being surrounded by the P+ isolation region. The N+ buried layer reduces parasitic currents in the P-N diode, and the further P+ region, appropriately biased, enables the P-N diode to block current at high reverse voltages. An N-P-N transistor is structurally similar to the P-N diode, having an additional N+ emitter region diffused into a P+ base region, corresponding to the P+ anode region of the P-N diode.

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