High voltage solid-state switch

Details High voltage solid-state switch High voltage solid-state switch

H - Electricity

01

L

356/162, 356/35

H01L 29/74 (2006.01) H01L 21/31 (2006.01) H01L 21/762 (2006.01) H01L 29/72 (2006.01) H01L 29/739 (2006.01)

Patent

CA 1145057

Hartman-16 HIGH VOLTAGE SOLID-STATE SWITCH Abstract of the Disclosure A high voltage solid-state switch utilizes a dielectrically isolated lightly doped n type semiconductor body with a heavily doped p type anode region, a heavily doped n type first gate region, a moderately doped p type second gate region, and a heavily doped n type cathode region. The second gate region surrounds the cathode region. The first gate region is located directly between the anode region and the second gate region. The doping levels of the regions and the location of the first gate region between the anode and cathode regions facilitates a current break feature of the switch.

363569

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